Aix-Marseille Université

Post-doctoral position 14-18 months

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Postdoctoral position is available immediately to work in the field of phase change memory based on GeSbTe alloys developed conjointly by STMicroelectronic and IM2NP (Marseille). The work will mainly focus on TOF-SIMS, XPS and transmission electron microscopy (TEM) characterization (HR imaging, GPA, EDX, EELS, SAED). The approach encompasses Focused Ion Beam fabrication of TEM lamellas (cross-section sample preparation and SEM observations) and Laser annealing.

The study concerns the reliability of phase change memories (PCM) which are based on Germanium-Antimony-Telluride (GST) alloy layers having very dissimilar resistances between the amorphous state for which the electrical resistance is very high and the crystalline state for which the resistance is low, allowing or not the flow of electrical current to account for the on and off states of the memory.

The study aims at characterizing PCM memory dots based on Germanium rich GST alloys (GGST) deposited on Si(001). The layers are amorphous or nanocrystalline, doped with nitrogen, which have been thermally pre-treated or not. They will be protected by a TiN or SiO2 layer. 

In this study, characterizations will be carried out in parallel by TOF-SIMS, XPS, TEM/STEM - EDX (+EELS). The aim is also to perform chemical elemental mapping at the atomic scale of the grains constituting the GGST as a function of the experimental annealing conditions and especially of the annealing dynamics (between seconds and femtoseconds). These data will be analyzed in relation to the chemical bonds determined in parallel by XPS. The depth distribution of light elements (H, Ar, N, O) will be determined by TOF-SIMS. One of the main goals of the study is to determine the evolution of chemical bonds as a function of annealing cycles (SET and RESET). 

Heating cycles will be performed by RTP annealing and by pulsed laser annealing (using a fine tunning of the amplitude of the thermal stimuli). The laser annealing studies will consist of two parts: 1) the preparation of the experiments by tests carried out during a first irradiation campaign according to the chosen laser and the constraints related to the samples; 2) the irradiation campaigns (different cycles, fluences, intensity, duration) to vary the temperature of the sample in accordance with the objectives listed below 

The main issues that are likely to modify the electrical behavior of PCMs and that the project aims to address are: i) Crystallization/amorphous transition dynamics; ii) Variability of dome positioning, size and shape; iii) Variability of crystal grain composition; iv) Influence of thickness, interfaces and thickness inhomogeneities. 

We seek applicants who are self-motivated to join an highly interactive research team. The research environment at IM2NP- team NOVA is broad and multidisciplinary. You will join a multicultural team craving to co-invent the future of processes, especially for applicants who are interested in industrial collaborations in the microelectronic field. Highly motivated candidates already involved in Transmission Electron Microscopy studies of semiconductor systems are encouraged to contact Mathieu Abel (Mathieu.Abel@im2np.fr) or Isabelle Berbezier (Isabelle.berbezier@im2np.fr), team NOVA.

Localization : CNRS-AMU, IM2NP, team NOVA, Saint-Jérôme Campus, Marseille

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Título
Post-doctoral position 14-18 months
Ubicación
Jardin du Pharo 58, bd Charles Livon Marsella, Francia
Publicado
2022-07-11
Fecha límite de aplicación
Unspecified
Tipo de trabajo
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